• 专利标题:   Manufacturing method for graphene and a method for exfoliating graphene which not only reduces the difficulty for manufacturing the graphene.
  • 专利号:   TW201524900-A
  • 发明人:   SUNG C, LIN I
  • 专利权人:   RITEDIA CORP
  • 国际专利分类:   B01D009/02, C01B031/04, C25B011/00
  • 专利详细信息:   TW201524900-A 01 Jul 2015 C01B-031/04 201576 Pages: 0 Chinese
  • 申请详细信息:   TW201524900-A TW146523 17 Dec 2013
  • 优先权号:   TW146523

▎ 摘  要

NOVELTY - The present invention provides a manufacturing method for graphene and a method for exfoliating graphene. The manufacturing method comprises the steps of: forming a high temperature zone and a low temperature zone in a reactor; causing an initial solution containing a carbon source to flow from the high temperature zone into the low temperature zone so as to form a supersaturated solution to precipitate graphene layers. The method for exfoliating graphene comprises the steps of: imparting 0.3 to 5 electron volts of energy to two inter-stacked graphene layers to break at least one bonding layer so as to separate an upper graphene layer from a lower graphene layer. Accordingly, the present invention not only reduces the difficulty for manufacturing the graphene and equipment costs, but also produces large-area graphene layers and improves the yield rate of the exfoliation of graphene.