▎ 摘　　要

NOVELTY - Preparation of boron-doped graphene involves supplying substrate into reaction chamber, heating substrate at 500-1300?0C, adding carbon source gas, boron source gas and oxygen to the reaction chamber, and reacting at 1-300 degrees C. USE - Preparation of boron-doped graphene used for display light, laser, photoelectric applications and energy applications. ADVANTAGE - The boron-doped graphene having high purity, boron content and theoretical specific surface area, and excellent mechanical strength, flexibility, uniformity and conductivity, is prepared with high productivity by simple and economical method without using catalyst.