• 专利标题:   Composite structure of a dielectric thin layer and graphene, comprises a large Goos-Hansen displacement near resonance state when light wave passes through certain graphene single layer at non-vertical incidence angle.
  • 专利号:   CN112363252-A, CN213633884-U
  • 发明人:   ZHAO D
  • 专利权人:   UNIV HUBEI SCI TECHNOLGY
  • 国际专利分类:   G02B001/00, G02B005/08
  • 专利详细信息:   CN112363252-A 12 Feb 2021 G02B-001/00 202129 Pages: 9 Chinese
  • 申请详细信息:   CN112363252-A CN11373121 30 Nov 2020
  • 优先权号:   CN11373121, CN22828109

▎ 摘  要

NOVELTY - The composite structure comprises two graphene single layers respectively deposited on two sides of a non-eosin dielectric thin layer (G) to form a three-layer structure. A light wave passes through a certain graphene single layer at a non-vertical incidence angle to improve reflectivity of a resonance state, and obtain large Goos-Hansen displacement near the resonance state when the light wave passes through a certain graphene single layer at a non-vertical incidence angle. The graphene single layer is provided with a graphene layer (G-1) and a graphene layer (G-2). USE - Composite structure of a dielectric thin layer and graphene. ADVANTAGE - The composite structure improves reflectivity of a resonance state and obtain large Goos-Hansen displacement near a resonance state. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of a composite structure.