• 专利标题:   Goos-Hansen displacement wavelength sensor based on composite structure graphene, has graphene single-layer that improves reflectivity and phase change rate of reflection coefficient near optical sub-form of multi-layer structure.
  • 专利号:   CN115342732-A
  • 发明人:   NI H, WANG Y, ZHAO D, SHEN J
  • 专利权人:   UNIV HUBEI SCI TECHNOLGY
  • 国际专利分类:   G01B011/02, G01J009/00
  • 专利详细信息:   CN115342732-A 15 Nov 2022 G01B-011/02 202298 Chinese
  • 申请详细信息:   CN115342732-A CN10452004 27 Apr 2022
  • 优先权号:   CN10452004

▎ 摘  要

NOVELTY - The sensor has a single graphene layer embedded between two adjacent layers of dielectric thin sheets. A transverse magnetic light is incident into a graphene structure from a left side. The composite structure graphene is formed with an optical fractal resonance state. The graphene layer is embedded in a single-layer structure. An optical sub-form is formed near the graphene layer structure. A GH displacement greater than 104 times of an incident wavelength is supported. USE - GH displacement wavelength sensor based on composite structure graphene for use in Cantor photonic crystal and can also be used in Kangtol, Fibona and EL-Morse. ADVANTAGE - The graphene crystal is embedded into the Cantor sequence, for improving the reflectivity and reflection coefficient phase change rate near the multi-layer structure optical sub-form. The central wavelength and sensitivity of the GH displacement wavelength sensor can be controlled by the chemical potential of the graphene.