▎ 摘　　要

NOVELTY - The adjustor has a semiconductor substrate formed on a medium layer. A graphene thin film, a source leakage electrode and an annular grate electrode are formed at the back side of the semiconductor substrate. The medium layer is made of aluminum oxide layer whose thickness is 5-100 nanometers. The semiconductor substrate is doped with a semiconductor silicon chip e.g. germanium substrate and silicon carbide, whose thickness is 50 to 500 micrometers. The source leakage electrode and the grate electrode are made of metals e.g. silver, gold, copper and nickel. USE - Graphene FET terahertz wave adjustor. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a graphene FET terahertz wave adjustor.