▎ 摘　　要

NOVELTY - Forming a thin film of transition metal dichalcogenide involves providing a substrate in a reaction chamber, and depositing a transition metal dichalcogenide thin film on the substrate using a sputtering process that uses a transition metal precursor and a chalcogen precursor and is performing at a first temperature. The chalcogen precursor is injected in a gas state and heat-treated the transition metal dichalcogenide thin film at a second temperature that is higher than the first temperature. The first temperature is about 500-800℃, and the second temperature is about 800-1200℃. A process pressure for the heat-treating the transition metal dichalcogenide thin film is about 1-10 torr, and a deposition pressure for the depositing the transition metal dichalcogenide thin film on the substrate is about 0.1-10 milliTorr. USE - Method for forming thin film of transition metal dichalcogenide. ADVANTAGE - The method transport carriers in transition metal dichalcogenide, that exhibits an aspect of ballistic transport, unlike conventional thin films or bulks, thereby realizing high mobility, high speed, and low power characteristics.