• 专利标题:   Epitaxial structure comprises an epitaxial layer defining a patterned surface and a graphene layer on the patterned surface of the epitaxial layer.
  • 专利号:   US2013285212-A1, CN103378236-A, TW201343536-A, TW458672-B1, CN103378236-B
  • 发明人:   WEI Y, FAN S
  • 专利权人:   WEI Y, FAN S, HONGFUJIN PRECISION IND SHENZHEN CO LTD, UNIV TSINGHUA, HON HAI PRECISION IND CO LTD, HONGFUJIN PRECISION IND SHENZHEN CO LTD
  • 国际专利分类:   H01L029/06, H01L033/02, H01L033/12, B82B001/00, H01L033/00
  • 专利详细信息:   US2013285212-A1 31 Oct 2013 H01L-029/06 201373 Pages: 25 English
  • 申请详细信息:   US2013285212-A1 US676032 13 Nov 2012
  • 优先权号:   CN10122533

▎ 摘  要

NOVELTY - Epitaxial structure (S1) comprises: an epitaxial layer (104) defining a patterned surface; and a graphene layer (102) on the patterned surface of the epitaxial layer. USE - Used as epitaxial structure. ADVANTAGE - The epitaxial structure utilizes patterned graphene layer which is formed in a simple and cost manner and does not pollute the substrate. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for an epitaxial structure (S2) comprising: a first epitaxial layer defining a first surface and a second surface opposite to the first surface, where the first surface is a patterned surface; a first patterned graphene layer embedded on the first surface of the first epitaxial layer; a second epitaxial layer on the second surface of the first epitaxial layer; and a second patterned graphene layer sandwiched between the first epitaxial layer and the second epitaxial layer. DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of process of growing the epitaxial layer on a substrate. Graphene layer (102) Epitaxial layer (104) Apertures (105) Groove (1043) Epitaxial film (1044)