• 专利标题:   Preparing graphene film useful in thin film transistor comprises preparing graded porous silica film filled with metal catalyst, depositing graphene on surface of graded porous silicon dioxide film and removing graded porous silica film.
  • 专利号:   CN112680719-A
  • 发明人:   XIA Y, ZHUO E, YU S
  • 专利权人:   BEIHAI HUIKE PHOTOELECTRIC TECHNOLOGY CO, HKC CO LTD
  • 国际专利分类:   C01B032/184, C01B033/14, C23C016/18, C23C016/26, C23C016/455, C23C016/52, C23C016/56, H01L027/12
  • 专利详细信息:   CN112680719-A 20 Apr 2021 C23C-016/455 202147 Pages: 12 Chinese
  • 申请详细信息:   CN112680719-A CN11386895 02 Dec 2020
  • 优先权号:   CN11386895

▎ 摘  要

NOVELTY - Preparing graphene film comprises preparing a graded porous silica film filled with a metal catalyst, depositing graphene on the surface of the graded porous silicon dioxide film by atom layer deposition method and removing the graded porous silica film to obtain the graphene film. USE - The film is useful in thin film transistor. ADVANTAGE - The film has good conductivity and can replace the traditional ITO material as a transparent electrode. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (1) a graphene film prepared by the above preparation method; and (2) a thin film transistor array.