▎ 摘　　要

NOVELTY - Preparing graphene film comprises preparing a graded porous silica film filled with a metal catalyst, depositing graphene on the surface of the graded porous silicon dioxide film by atom layer deposition method and removing the graded porous silica film to obtain the graphene film. USE - The film is useful in thin film transistor. ADVANTAGE - The film has good conductivity and can replace the traditional ITO material as a transparent electrode. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (1) a graphene film prepared by the above preparation method; and (2) a thin film transistor array.