▎ 摘　　要

NOVELTY - The graphene-based memory device (100) has an initial graphene layer (101) and a final graphene layer (102). An initial insulation layer (103) is located between initial and final graphene layers and is provided with an opening (104) between the graphene layers. The initial graphene layer is configured to bend into opening to contact the final graphene layer based on initial electrostatic force. A substrate (108) is made of bulk silicon, silicon-on-insulator, silicon carbide, silicon germanium, germanium, quartz, sapphire and polyethylene terephthalate film. USE - Graphene-based memory device such as flash memory, optical disk, compact disk, DVD, hard disk, floppy disk, and magnetic tape. ADVANTAGE - The initial graphene layer is configured to bend into opening to contact the final graphene layer based on initial electrostatic force. Thus, the non-volatile memory can be formed of two graphene layers programmable by electrostatic charge to hold program information even when no power is supplied to the memory. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a graphene-based memory circuit. DESCRIPTION OF DRAWING(S) - The drawings show the sectional views of memory device. Graphene-based memory device (100) Graphene layers (101,102) Insulation layers (103,107) Opening (104) Substrate (108)