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  • 专利标题:   Preparation of graphene nanoribbons used for microelectronics and nanoelectronics, involves patterning graphene film using meniscus as mask, and forming graphene nanoribbons from meniscus-masked region of graphene film.
  • 专利号:   US2014220773-A1, US9356151-B2
  • 发明人:   TOUR J M, ABRAMOVA V, SLESAREV A
  • 专利权人:   UNIV RICE WILLIAM MARSH, UNIV RICE WILLIAM MARSH
  • 国际专利分类:   H01L021/311, H01L021/768, B82Y040/00, C01B031/04, H01L021/3065, H01L021/3213, H01L021/44, H01L029/66, H01L029/786
  • 专利详细信息:   US2014220773-A1 07 Aug 2014 H01L-021/768 201455 Pages: 56 English
  • 申请详细信息:   US2014220773-A1 US171642 03 Feb 2014
  • 优先权号:   US759730P, US171642

▎ 摘　　要

NOVELTY - Preparation of graphene nanoribbons involves patterning a graphene film using meniscus acting as a mask above a region of the graphene film, and forming graphene nanoribbons from the meniscus-masked region of graphene film. USE - Preparation of graphene nanoribbons used for microelectronics and nanoelectronics. ADVANTAGE - The method enables the scalable preparation of graphene nanoribbons with desired aspect ratio and controlled positioning of nanoribbons from the graphene film associated with meniscus, by simple process. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of wires.