▎ 摘　　要

NOVELTY - The method involves forming a graphene laser beam that is irradiated in a silicon carbide (Sic) substrate. Gas atmosphere is irradiated in amount rear area of a semiconductor device. An insulating layer is laminated in the semiconductor device. A drain and gate electrode is provided with in a metal layer that is laminated on a source. width of a nano ribbon is 10nm Lee. USE - Method for manufacturing a graphene transistor. ADVANTAGE - The method enables improving profitability and reducing manufacturing cost. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a graphene transistor manufacturing method.