▎ 摘　　要

NOVELTY - Method for preparing large-size clean graphene material, involves (a) using a chemical vapor deposition method to grow a graphene layer on surface of metal substrate, (b) using an electron beam evaporation method to form a metal layer on the graphene layer that can form a low van der Waals force bond with the graphene, (c) forming a photoresist layer on the metal layer, and (d) adhering the glue-containing soft film on the surface of the photoresist layer, and peeling off the metal layer and the photoresist layer. USE - The method is useful for preparing large-size clean graphene material for optoelectronics application. ADVANTAGE - The method does not require special control of the operating environment, uniquely utilizes the difference in van der Waals forces between material interfaces to achieve the exfoliation of amorphous carbon on the surface of large-scale graphene, and treats the surface of graphene to atomic level cleanliness.