• 专利标题:   Ultra-sensitive flexible gallium oxide photoelectric detector used in optical imaging or optical track detection has metal aluminum film provided with first metal aluminum film, second metal aluminum film, and eighth metal aluminum film.
  • 专利号:   CN112968073-A, CN112968073-B
  • 发明人:   YANG X, CHEN Y, SHAN C
  • 专利权人:   UNIV ZHENGZHOU
  • 国际专利分类:   C23C014/08, C23C014/20, C23C014/35, C23C016/40, C23C016/455, C23C028/00, H01L031/109, H01L031/18
  • 专利详细信息:   CN112968073-A 15 Jun 2021 H01L-031/18 202158 Pages: 11 Chinese
  • 申请详细信息:   CN112968073-A CN10136368 01 Feb 2021
  • 优先权号:   CN10136368

▎ 摘  要

NOVELTY - Detector has a substrate, whose upper end is orderly provided with a metal aluminum film, an alumina film, a gallium oxide film and a graphene electrode from bottom to top. The metal aluminum film is provided with a first metal aluminum film, a second metal aluminum film, a third metal aluminum film, a fourth metal aluminum film, a fifth metal aluminum film, a sixth metal aluminum film, a seventh metal aluminum film, and an eighth metal aluminum film. USE - The array is useful in optical imaging or optical track detection (claimed). ADVANTAGE - The detector has high sensitivity and good response speed, and reduces Schottky barrier to realize high response and fast response speed. DETAILED DESCRIPTION - INDEPENDENT CLAIMs are also included for: (1) preparing ultra-sensitive flexible gallium oxide photoelectric detector array comprising (i) cleaning the substrate, (ii) using laser direct writing performing radio frequency magnetron sputtering on metal aluminum film on the substrate, where the metal aluminum film is used as the reflecting layer and the low electrode, (iii) depositing alumina film on the metal aluminum film by atom layer phase deposition technology, (4) sputtering gallium oxide film on the alumina film by using magnetron sputtering technology, and (v) using wet transfer technology, transferring a layer of graphene on the gallium oxide film as the common electrode; and (2) photodetector array, prepared by using the ultra-sensitive flexible gallium oxide photoelectric detector.