▎ 摘　　要

NOVELTY - Photoelectric detector comprises a first substrate layer, and a second substrate layer, which is sequentially arranged from bottom to top on one side of the insulating layer of the first substrate layer. The photosensitive layer, the protective layer, and the source electrode and the drain electrode with an electrode gap of 0.5-20 nm. The material of the second substrate layer includes a ferroelectric material. The material of the photosensitive layer includes two-dimensional light-absorbing materials molybdenum sulfide, molybdenum diselenide, tungsten disulfide, tungsten diselenide, molybdenum telluride, rhenium sulfide, black phosphorus and/or graphene. USE - The photoelectric detector is useful in business and military applications. ADVANTAGE - The photoelectric detector reduces the recombination of electron-hole pairs, effectively shortens the transit and diffusion time of carriers, improves the response speed and detection accuracy of the device, realizes the detection of weak light by the device, effectively controls the transport state of the carriers, effectively reduces the power consumption without affecting the light absorption efficiency of the device, and effectively reduces the dark current when there is no gate voltage. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparing the photoelectric detector. DESCRIPTION OF DRAWING(S) - The drawing shows the structure schematic diagram of the photoelectric detector. Source (1-1) Drain electrode (1-2) Protective layer (2) Photosensitive layer (3) Second substrate layer (4) First substrate layer (5) Insulating layer (5-1) Conductive substrate layer (5-2) Electrode gap (6)