▎ 摘　　要

NOVELTY - Etching thick-film material nanopattern involves: transferring the film material to a substrate; spin coating polymethylmethacrylate resist (AR-P 669.04) at 600 rpm for 10 seconds and 6000 rpm for 60 seconds, then baking in oven at 150°C for 1 hour, then spin coating polymethylmethacrylate (AR-P 679.03) at 600 rpm for 10 seconds and 6000 rpm for 60 seconds, baking on hot plate at 150°C for 3 minutes, and exposing to form an inverted trapezoid structure; performing electron beam photoetching pattern on the spin coated thin film material; evaporating 50 nm thick aluminum film on the surface of the photoetched pattern using an electron beam; stripping with acetone to remove aluminum on the portion with electron beam glue, and then performing inductively coupled plasma etching; and removing the surface electron beam evaporated aluminum film using chlorine gas at 200°C to obtain etched film structure. USE - The method is useful for etching thick-film material nanopattern. ADVANTAGE - The method can etch thin film with a thickness of several tens of nanometers, and solves the problem that the patterned etching of the nano-scale film can only etch single layer or few layers of two-dimensional materials.