▎ 摘　　要

NOVELTY - A graphene intercalation structured-gallium nitride-based LED device preparing method involves magnetron sputtering an aluminum nitride film on a sapphire substrate to obtain a sputtered aluminum nitride substrate, growing a graphene layer on a metal substrate, heating the sputtered aluminum nitride substrate covering the graphene to obtain a heat-treated substrate, passing the gallium source, nitrogen gas and N-type dopant source to obtain an N-type gallium nitride substrate, growing a gallium nitride layer, cooling the LED epitaxial layer based on the graphene intercalation structure to complete the preparation of the LED epitaxial layer, forming a silicon dioxide protective layer, etching the silicon dioxide protective layer, forming a P-type electrode ohmic contact layer and an N-type electrode layer on the rough surface and portions of the exposed N-type gallium nitride layer, respectively and allowing to high temperature annealing alloying. USE - Method for preparing graphene intercalation structured-gallium nitride-based LED device. ADVANTAGE - The method enables preparing graphene intercalation structured-gallium nitride-based LED device with improved quality and improved light emitting efficiency. DETAILED DESCRIPTION - A graphene intercalation structured-gallium nitride-based LED device preparing method involves magnetron sputtering an aluminum nitride film having a thickness of 20-80 nm on a sapphire substrate to obtain a sputtered aluminum nitride substrate, utilizing a chemical vapor deposition method to grow a graphene layer on a metal substrate, removing the metal substrate by placing the graphene-grown metal substrate in a 64 g/L ammonium persulfate solution for 12 hours to obtain a graphene layer without a metal substrate, transferring the graphene layer onto the sputtered aluminum nitride substrate to obtain a sputtered aluminum nitride substrate covering the graphene, placing the sputtered aluminum nitride substrate covering the graphene in a metal organic chemical vapor deposition reaction chamber, introducing a mixed gas of hydrogen and ammonia into the reaction chamber for 5-7 minutes, and heating the graphitic aluminum nitride substrate coated with graphene under the reaction chamber to 600-650 degrees C to obtain a heat-treated substrate, raising the temperature of the reaction chamber to 1100 degrees C, passing the gallium source, nitrogen gas and N-type dopant source, growing the thickness on the substrate after heat treatment to 3000-5000 nm to obtain an N-type gallium nitride substrate, passing the reactants into the reaction chamber and controlling the flow rate, adjusting the temperature of the reaction chamber to 800 degrees C, growing a gallium nitride layer having a thickness of 10-30 nm, adjusting the temperature of the reaction chamber to 700 degrees C to a thickness of 5-7 nm, growing aluminum-gallium nitride or indium-gallium nitride layer repeatedly alternately on the N-type gallium nitride substrate to obtain a multi-quantum well layer, raising the temperature of the reaction chamber to 1000 degrees C, passing a gallium source, a nitrogen source and a P-type dopant source, growing a thickness of 300-500 nm on multi-quantum well layer to obtain LED epitaxial layer based on a graphene intercalation layer structure, stopping the heating and aeration of the reaction chamber, cooling the LED epitaxial layer based on the graphene intercalation structure to room temperature to complete the preparation of the LED epitaxial layer, utilizing sol-gel method and a spin coating process on the LED epitaxial layer, forming a light brown transparent sol by spin coating indium(III) chloride tetrahydrate, tin(IV) chloride pentahydrate, absolute ethanol and deionized water at a temperature of 480 degrees C on the LED epitaxial layer to form a 3000 nm tin-doped indium oxide transparent conductive layer, subjecting the portion of the transparent conductive layer, the P-type gallium nitride layer, and multiple quantum well layer to mesa etching by dry etching until a portion of the N-type gallium nitride layer is exposed, forming a silicon dioxide protective layer having a thickness of 200 nm by chemical vapor deposition on a portion of the transparent conductive layer and the exposed portion of the N-type gallium nitride layer, etching the silicon dioxide protective layer by dry etching at a position where the mesa etching is not performed until a part of the transparent conductive layer is exposed, etching the silicon dioxide protective layer at the position where the mesa etching is performed until the N-type gallium nitride is exposed a portion of the layer and forming a rough surface on the surface of the exposed transparent conductive layer, forming a P-type electrode ohmic contact layer and an N-type electrode layer on the rough surface and portions of the exposed N-type gallium nitride layer, respectively and allowing to high temperature annealing alloying after metal growth.