▎ 摘　　要

NOVELTY - The SiC substrate is washed and pre-processed to remove oxidate and other foreign matters on the surface. The washed SiC is put to the chemical vapor and deposition tubular furnace, and vacuumized at vacuum degree of higher than 10-5Torr. The silicon on the bombarded zone of surface on the target table is vaporized and the rest carbon is recombined to form continuous graphene. The temperature of substrate is lifted to be more than 750 degrees C and vacuum degree is kept less than 10-40Torr. The default surface formed in the growing process of graphene is annealed and removed. USE - Method for epitaxially growing carbon semiconductor nanometer film material graphene on silicon carbide (SiC) substrate. ADVANTAGE - The high-quality graphene is formed on the surface of the SiC using the simple method. DETAILED DESCRIPTION - The hydrogen and argon mixing gas is pumped and hydrogen attacked at temperature of more than 1500 degrees centigrade until the surface of wafer is as wide as atom. The SiC substrate is put to the target table of the pulsed electron deposition (PED) vacuum cavity, after attacked with hydrogen. The vacuum degree is adjusted to be less than 20mTorr, and the temperature of vacuum cavity is adjusted by changing the temperature of original substrate in cavity. The heating temperature in the vacuum cavity is adjusted to keep the temperature of surface of SiC substrate on the target table less than 300 degrees centigrade. The target table is rotated and continuing to bombard, and the newly generated graphene is combined with the graphene generated in earlier procedure to form the graphene with needed size. An INDEPENDENT CLAIM is included for preparing method of extended graphene.