▎ 摘　　要

NOVELTY - The method involves growing graphene on a substrate chemical vapor deposition. The target substrate is placed in the deposition chamber and vapor deposition chamber is evacuated. A metal evaporation source is heated to temperature above the melting point of the metal. The metal nanoparticles are deposited on the target substrate which is passed into the deposition chamber into which inert gas of atmospheric pressure is injected. The graphene grown on the substrate is transferred and deposited on the target substrate to obtain graphene transparent conductive film. USE - Method of regulation of electronic structure of graphene thin film. ADVANTAGE - The carrier concentration is increased so that performance of the thin film is improved and durability of the film is improved.