• 专利标题:   Multilayer composite structure used in industrial applications, has two graphene layers that sandwich copper layer, and electron-path tunnels that are provided between copper layer and graphene layers.
  • 专利号:   US2018102197-A1
  • 发明人:   ADAMS H J
  • 专利权人:   INT COPPER ASSOC LTD
  • 国际专利分类:   H01B001/04, H01B001/02, H01B013/00, B32B009/04, C23C016/26
  • 专利详细信息:   US2018102197-A1 12 Apr 2018 H01B-001/04 201827 Pages: 26 English
  • 申请详细信息:   US2018102197-A1 US697114 06 Sep 2017
  • 优先权号:   US606125P, US697114

▎ 摘  要

NOVELTY - The structure has a copper layer, and two graphene layers that sandwich the copper layer. Electron-path tunnels are provided between the copper layer and the graphene layers. The graphene layers are one of a graphene monolayer and a graphene bi-layer. The copper layer is comprised of a crystallographic orientation. A first graphene layer, a first copper layer on the first graphene layer, a graphene bi-layer on the first copper layer, a second copper layer on the graphene bi-layer, and a second graphene layer on the second copper layer are provided. USE - Multilayer composite structure used in industrial applications. ADVANTAGE - The energy consumption is reduced, and the benefits for downscaled electronics are offered. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for forming the multilayer structure. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating the process for forming multilayer structure. Step for providing first copper foil (S10) Step for depositing graphene layers on opposing surface sides of first copper foil by chemical vapor deposition to form first composite structure (S12) Step for providing first copper foil (S14) Step for depositing graphene layers on opposing surface sides of second copper foil by chemical vapor deposition to form second composite structure (S16) Step for stacking two composite structures to form multilayer structure (S18)