▎ 摘　　要

NOVELTY - The method involves forming a graphene layer with a substrate layer, where a medium layer is formed with an upper end of the graphene layer and a bump structure. A mask side wall is formed with an etching layer, the medium layer and the graphene layer, where the medium layer is made of silicon dioxide, silicon nitride, silicon oxynitride, silicon oxide, oxide, hafnium or titanium nitride solution. A graphene nanometer belt is formed with the graphene layer and fixed with the mask side wall. USE - Semiconductor device manufacturing method. ADVANTAGE - The method enables providing simple process, reducing temperature consumption and improving deposition and smoothening efficiency so as to produce enough energy gap of a graphene device in an efficient manner. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a semiconductor device.