▎ 摘　　要

NOVELTY - The method involves forming a material layer (24) on an insulation substrate (30). The material layer is patterned by utilizing one of an electron beam and a focused ion beam. A graphene layer (40A) is formed before patterning the material layer, where the graphene layer is formed on surface of the material layer or on surface of the substrate under the material layer, and the substrate is an insulation substrate including a stacked structure with multiple layers comprising one of a silicon oxide layer, a silicon nitride layer and an insulating layer. USE - Method for preventing charge accumulation by utilizing a graphene layer in semiconductor device manufacturing process. ADVANTAGE - The method enables utilizing the graphene layer when electric charges are applied to a target material layer so as to prevent charge accumulation on the surface of the target material layer and provide another path for electric charges, so that distortion or damage of a material layer pattern that occur when using electron beam lithography or a focused ion beam, can be prevented, thus utilizing the graphene layer in electromagnetic wave shielding and protection for a structure against strong electric field. The method enables utilizing the graphene layer that has metal level conductivity and very thin structure, so that the graphene layer does not operate as an obstacle when transferring a pattern, and can be easily removed by using plasma, thus prolonging preservation period, and reducing reactivity. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for preparing a material layer for a semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating a method for preventing charge accumulation in semiconductor device manufacturing process. Material layer (24) Insulation substrate (30) Graphene layer (40A) Material pattern (46)