• 专利标题:   Manufacturing graphene used in field effect transistor, supercapacitor, hydrogen generation or storage, solar cell, photocatalyst and biosensor, comprises forming the graphene by unzipping doped carbon materials by an external stimulus.
  • 专利号:   US2017190580-A1, KR2017080457-A, US10106417-B2, KR1928093-B1
  • 发明人:   KIM S O, LEE H J, LIM J, KIM S
  • 专利权人:   KOREA ADVANCED INST SCI TECHNOLOGY, KOREA ADVANCED SCI TECHNOLOGY INST, KOREA ADVANCED SCI TECHNOLOGY INST
  • 国际专利分类:   C01B031/02, C07D301/02, C25B001/00, B01J019/08, C01B031/04, C01B032/184, C01B032/23
  • 专利详细信息:   US2017190580-A1 06 Jul 2017 C25B-001/00 201750 Pages: 30 English
  • 申请详细信息:   US2017190580-A1 US393192 28 Dec 2016
  • 优先权号:   KR189225, KR149475

▎ 摘  要

NOVELTY - Manufacturing graphene, comprises forming the graphene by unzipping doped carbon materials by an external stimulus. USE - The method is useful for manufacturing graphene (claimed) which is useful in a field effect transistor, a supercapacitor, a hydrogen generation/storage, a solar cell, a photocatalyst, and a biosensor. ADVANTAGE - The method: provides a graphene-based nanostructure doped with heteroatoms without changing a graphene structure by unzipping doped carbon materials; does not manufacture typical graphene but manufacture graphene of which borders are introduced with carbonyl; easily manufactures a functional graphene derivative using the introduced carbonyl without changing a graphene chemical structure; and is capable of progressing a selective unzipping phenomenon of doped carbon materials using relatively low electrochemical potential or of doped carbon materials using a physical external stimulus. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene manufactured by unzipping doped carbon materials by an external stimulus and having an edge formed with carbonyl.