▎ 摘　　要

NOVELTY - The device (100) has a gate oxide part (112) located on a conductive substrate i.e. silicon substrate (110), where the substrate functions as a gate electrode. Metals (122, 124) are provided on the gate oxide part and separated from each other. A graphene channel layer (130) extends between the metals. A source electrode (142) and a drain electrode (144) are provided on edges of the channel layer and formed to have thickness in a range of about 10 nanometer to about 1000 nanometer. The gate electrode is provided on the channel layer between the source and drain electrodes. USE - Graphene electronic device e.g. FET (claimed) such as back gate FET and top gate FET. ADVANTAGE - The graphene channel layer is formed without transferring process, so that damage of the graphene channel layer during the transferring process can be avoided. The graphene channel layer is formed by wet etching graphene after forming a metal protection layer on graphene, so that contact of photoresist with the graphene can be prevented by forming the metal protection layer before removing a metal catalyst layer under the graphene after directly growing the graphene on the substrate, thus preventing loss of inherent characteristics of the graphene, and hence preventing damage to the graphene by the photoresist remaining when photoresist pattern is removed. The graphene is grown at low temperature, so that damage to the substrate due to high temperature can be avoided. DETAILED DESCRIPTION - The graphene channel layer is mono-layered graphene or bilayered graphene. INDEPENDENT CLAIMS are also included for the following: (1) a method for fabricating a graphene electronic device (2) a method for forming a graphene electronic device. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a structure of a graphene electronic device. Graphene electronic device (100) Silicon substrate (110) Gate oxide part (112) Metals (122, 124) Graphene channel layer (130) Source electrode (142) Drain electrode (144)