▎ 摘 要
NOVELTY - Processing graphene with positive electrode material involves dissolving nickel source, cobalt source, manganese source and lithium source in water, adding ethylene glycol, and mixing; sintering sol, soaking in alkaline solution, and washing with water and ethanol; adding binder and dispersant, and mixing into slurry; coating, pressing, spraying or sputtering onto current collector, and drying to positive plate; adding graphite oxide and polypropylene, adding ethanol-water solution, and dispersing; adding conductive agent and binder; coating on positive electrode plate; reacting; and cooling. USE - Method for processing graphene with positive electrode material (claimed). ADVANTAGE - The material has good high rate charge and discharge performance. DETAILED DESCRIPTION - Processing graphene with positive electrode material comprises: (A) dissolving nickel source, cobalt source, manganese source and lithium source in water, adding ethylene glycol into aqueous solution, uniformly mixing and evaporating to form sol; (B) taking out sol, sintering to obtain porous alumina loaded with lithium nickel cobalt lithium manganese oxide, soaking in alkaline solution, filtering, washing with water and ethanol, evaporating crystals, and ball-milling to particle size of 10 nm-100 mu m; (C) adding binder and dispersant, mixing or milling for 2-5 hours into slurry; (D) coating, pressing, spraying or sputtering onto current collector, placing in sintering furnace, preheating in sintering furnace for 30 minutes at 40-60 degrees C, heating to 90-100 degrees C, and drying for 3-5 hours to positive plate; (E) adding graphite oxide and polypropylene into ball mill, ball milling for 30-60 minutes, adding ball-milled mixture to mixed solution of ethanol and water, and dispersing mixture to form suspension with concentration of 1-20 g/L; (F) adding conductive agent into suspension, and mixing binder into slurry; (G) coating on positive electrode plate; (H) placing coated positive plate into muffle furnace, filling with inert gas for reaction, and reacting at 800-1100 degrees C for 5-6 hours; and (I) cooling.