▎ 摘　　要

NOVELTY - Film having patterns is prepared. The obtained product is placed in quartz tube, heated, argon gas carrying carbon tetrachloride is added and reacted, to obtain carbon film. The obtained carbon film is placed in buffer hydrochloric acid solution, to remove silicon dioxide present in portion other than grid. The silicon dioxide carbon film and copper film are placed in argon gas, heated, copper film is removed, surface of graphene is evaporated, deposited, photoetched and dried, to obtain side-grid graphene transistor. USE - Manufacture of side-grid graphene transistor (claimed). ADVANTAGE - The method provides side-grid graphene transistor having high carrier mobility and suppressed dielectric breakdown. DETAILED DESCRIPTION - Silicon carbide wafer surface is cleaned and silicon layer of thickness 0.4-1.2 mu m is deposited on silicon carbide surface using plasma-enhanced chemical vapor deposition. The surface of silicon dioxide is coated with acrylic resin poly(methyl methacrylate) solution, baked, photoetched using buffer hydrofluoric acid, to obtain film having carved grid pattern formed with respect to side grid electrode, source electrode, drain electrode and channels of side grid transistor. The obtained product is placed in quartz tube, heated in water bath to 800-1000 degrees C, argon gas carrying carbon tetrachloride at 60-80 degrees C is added to quartz tube and reacted for 30-120 minutes, to obtain carbon film. The obtained carbon film is placed in buffer hydrochloric acid solution, to remove silicon dioxide present in portion other than grid. The silicon dioxide carbon film and copper film are placed in argon gas, heated at 900-1100 degrees C, annealed for 15-25 minutes, to obtain carbon film with graphene generated at position of the grid. The copper film is removed. The surface of graphene is evaporated and deposited to obtain metal palladium/aluminum layer, photoetched using oxygen gas as reaction gas and dried, to obtain side-grid graphene transistor.