▎ 摘　　要

NOVELTY - Graphene/plasma excimer black silicon near infrared detector structure comprises an n-type silicon chip (5), where the middle part of the front surface of the silicon chip is provided with a plasma excimer black silicon (4), and the front side of the silicone chip is arranged with a silicon dioxide layer (3). The silicon dioxide layers is arranged on the front of a front electrode (2). A graphene layer (1) is arranged in the plasma excimer black silicon. The peripheral side of graphene layer is extended and in contact with the front electrode. A back electrode (6) is provided on the back of silicon chip. USE - Graphene/plasma excimer black silicon near infrared (IR) detector structure for image sensing, optical communication, industrial automation and medical diagnosis fields. ADVANTAGE - The graphene light/plasma excimer black silicon near infrared detector structure has improved detector photoelectric performance, wide response spectrum range and strong response intensity. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a preparation method of the graphene/plasma excimer black silicon near infrared detector structure. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic structural view of a graphene/plasma excimer black silicon near infrared detector structure. Graphene layer (1) Front electrode (2) Silicon dioxide layer (3) Plasma excimer black silicon (4) Silicon wafer (5) Back electrode (6)