▎ 摘　　要

NOVELTY - An LED flip chip, the LED flip chip comprising a substrate and formed on the substrate of the epitaxial layer formed on the epitaxial layer of the reflecting layer, the reflecting layer is formed on the barrier layer of the graphene, N lead electrode formed on the barrier layer through the graphene. reflecting layer, a P type gallium nitride layer, luminescent layer, until the N-type gallium nitride layer on the surface of the N electrode hole, the exposed surface of the epitaxial layer, the exposed surface of barrier layer graphene, the gap on the exposed substrate surface and N electrode hole and N lead electrode are formed with an insulating layer, the insulating layer is formed with mutually insulated N-bonding pad and the P-bonding pad, the N-bonding pad and the N-electrode conductive connection is formed, the P-bonding pad and the barrier layer of the graphene to form electric connection. The utility model not only can effectively prevent the reflection layer by graphene barrier layer metal material migration, and can improve luminous efficiency and brightness of the chip.