▎ 摘　　要

NOVELTY - Manufacture of light-emitting device (201) involves forming a graphene layer structure (210) having a surface containing at least three surface portions (A)-(C) on a non-metallic substrate, forming a layer (L1) of dielectric material (215) on the surface portion (A), forming a light-emitting structure on the surface portion (B), forming a layer (L2) of dielectric material (250) on the surface portion (C), and providing a source contact (235) on the layer (L2), a gate contact (240) on the layer (L2) and a drain contact (245) on the light-emitting structure. USE - Manufacture of light-emitting device e.g. organic LED (OLED) device used in array (all claimed). ADVANTAGE - The method provides an LED comprising an alternative to the commonly used indium tin oxide without resulting in a loss in LED efficiency and durability. It provides an improved and simple, yet more versatile, method for manufacturing an LED, along with an LED per se comprising graphene, that overcomes, or reduces, problems associated with prior art devices. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: light-emitting device; and array. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of light-emitting device. 201Light-emitting device 210Graphene layer structure 215,250Dielectric materials 220Hole transport layer 235Source contact 240Gate contact 245Drain contact