▎ 摘　　要

NOVELTY - Production of an electronic device (10) involves providing a substrate comprising layer (L1) and layer (L2) on a heated susceptor in a reaction chamber including cooled inlets distributed across the substrate and have a constant separation from the substrate (6), supplying a flow comprising a precursor compound through inlets and into the reaction chamber to decompose the precursor compound and form a graphene layer structure on a surface of the layer (L1) of the substrate, where the inlets are cooled to 100 degrees C or less and the susceptor is heated to a temperature of at least 50 degrees C in excess of a decomposition temperature of the precursor, selectively laser ablating the graphene to expose portions of the surface of the layer (L1) of the substrate, and selectively laser ablating the surface of the layer (L1) of the substrate to expose portions of the layer (L2) of the substrate, where the layers (L1) and (L2) are electrically conductive layer (12) or electrically insulative layer (13). USE - Production of electronic device such as integrated circuit board (claimed) used for light-emitting diode, photovoltaic cells, hall sensors, and diodes. ADVANTAGE - The method is simple, inexpensive, and environmentally-friendly, and enables production of electronic device with excellent electrical properties and thermal conductivity. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for an integrated circuit board, which comprises a graphene component and conductive traces obtained by the method. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of electronic device. Substrate (6) Electronic device (10) Support (11) Electronically conductive layer (12) Electronically insulating layer (13)