• 专利标题:   Vertical-type graphene LED chip, has substrate bonded with graphene through metal substrate layer, where substrate is connected with interface and formed with p-type and n-type gallium nitride layers and multi-quantum-well layer.
  • 专利号:   CN203415610-U
  • 发明人:   LIN S, LI X
  • 专利权人:   HANGZHOU GELANFENG NANO TECHNOLOGY CO LT
  • 国际专利分类:   H01L033/14
  • 专利详细信息:   CN203415610-U 29 Jan 2014 H01L-033/14 201424 Pages: 7 Chinese
  • 申请详细信息:   CN203415610-U CN20358446 21 Jun 2013
  • 优先权号:   CN20358446

▎ 摘  要

NOVELTY - The utility model claims a vertical type graphene LED chip are a back metal layer, the substrate, the first bonding metal layer, a second bonding metal layer, a p-type electrode and the p-type gallium nitride layer, a multi-quantum-well layer, the n-type gallium nitride layer, an n-type electrode, the substrate and the back metal layer with graphene, or the substrate and the first bonding metal layer with graphene, or the substrate and the back metal layer and a substrate with the first bonding metal layer are provided with graphene. Increasing the graphene layer can solve the silicon substrate with the bonding metal layer and the back metal layer contacting the hot poor interface, at the same time, graphene with high carrier mobility, the graphene-containing layer does not affect even improve the luminous performance of the whole LED device.