▎ 摘　　要

NOVELTY - Preparation of graphene involves arranging a copper foil in a reaction chamber, heating the reaction chamber to a graphene growth temperature in a reducing atmosphere containing hydrogen, growing graphene domain by supplying a carbon source while maintaining a constant growth pressure and growth temperature of graphene, forming a lapping film, and cooling the reaction chamber. The surface roughness and the grain boundary of the copper foil are controlled by adjusting a heating rate of the reaction chamber. USE - Preparation of graphene (claimed). ADVANTAGE - The method enables preparation of graphene by controlling defects and number of layers of graphene products by controlling process conditions.