▎ 摘　　要

NOVELTY - Preparation of graphene-boron nitride heterophase composite thin film material includes immersing metal sheet in hydrochloric acid, washing with deionized water, blowing nitrogen to dry, placing in quartz tube electric furnace, infusing argon and hydrogen mixed gas, raising furnace temperature, introducing aminoalkyl boron vapor, stopping heating, cooling to room temperature, stopping argon and hydrogen mixed gas charging, removing the metal sheet, soaking the metal sheet in ferric chloride aqueous solution, washing with deionized water and coating the metal sheet surface with carbon source. USE - Preparation of graphene-boron nitride heterophase composite thin film material. ADVANTAGE - The method is clean and non-polluting and provides graphene-boron nitride heterophase composite thin film material having increased electrical property. DETAILED DESCRIPTION - Preparation of graphene-boron nitride heterophase composite thin film material comprises immersing metal sheet in 0.5-1.5 mol/L hydrochloric acid for 5-10 seconds, washing with deionized water, blowing nitrogen to dry, placing in quartz tube electric furnace, infusing argon and hydrogen mixed gas at 1-3:2 ratio, raising furnace temperature to 900-1000 degrees C, keeping the temperature for 5-30 minutes, introducing aminoalkyl boron vapor for 20-30 minutes, stopping heating, cooling to room temperature at 20-30 degrees C/minute, stopping argon and hydrogen mixed gas charging, removing the metal sheet, soaking the metal sheet in ferric chloride aqueous solution for 10-60 seconds, washing with deionized water, coating the metal sheet surface with 0.1-0.5 g carbon source, placing in quartz tube electric furnace, infusing argon and hydrogen mixed gas, where ratio of argon and hydrogen is 5-15:10, raising furnace temperature to 900-1000 degrees C, keeping the temperature for 5-30 minutes, stopping heating, cooling to room temperature at 20-30 degrees C/minute, stopping argon and hydrogen mixed gas charging, taking out the metal sheet, rotary coating the metal sheet surface with polymethyl methacrylate (PMMA) solution, drying for 5-30 minutes, such that PMMA thin film is adhered on metal sheet surface, dissolving in ferric chloride solution to remove the metal sheet, transferring the PMMA film, which floats on ferric chloride solution, to silicon substrate surface, immersing the silicon substrate in acetone for 30-180 minutes, transferring to silicon chip surface, and obtaining two-dimensional graphene-boron nitride heterophase composite thin film material.