▎ 摘　　要

NOVELTY - The method involves filling solid (3) between a photoresist (1) and a cover (2), and exposing the solid. A liquid immersion exposure is performed from outside of the cover of the photoresist. A graphene or graphite (4) is used as cover for the photoresist, and a mask (6) is closely adhered to the graphene or graphite. A circuit pattern (5) of the mask is exposed by applying the cover of graphene or graphite. The mask formed between graphene or graphite in which the circuit pattern is sandwiched is closely exposed. The circuit pattern is held by making electrostatic force work between two graphene or graphite. The cover is brought into close contact with the graphene or the graphite. USE - Exposure method for manufacturing integrated circuit. ADVANTAGE - The protection of the circuit pattern of the mask and the adhesion of the fine particles are improved by applying the cover of the graphene or the graphite to the circuit pattern of the mask. The mask has a three-dimensional structure when a mask with a circuit interposed between the graphene or the graphene is used, and the front and rear directions of the mask are reduced in vibration in the plane direction, or the residual stress of the mask is almost eliminated. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of an exposure device using graphene or graphite in a circuit pattern of a cover and a mask. 1Photoresist 2Cover 3Solid 4Graphene or graphite 5Circuit pattern 6Mask