• 专利标题:   N-doping of graphene for N-doped graphene oxide/graphene bilayered structure, involves forming graphene oxide by oxygen-plasma treatment of graphene, transferring graphene oxide to another graphene and doping with functional group.
  • 专利号:   KR2016149672-A, KR1772675-B1
  • 发明人:   CHO H J, SEO Y M, WHANG D
  • 专利权人:   UNIV SUNGKYUNKWAN RES BUSINESS FOUND
  • 国际专利分类:   C01B031/04, C23C016/26
  • 专利详细信息:   KR2016149672-A 28 Dec 2016 C01B-031/04 201713 Pages: 17
  • 申请详细信息:   KR2016149672-A KR087158 19 Jun 2015
  • 优先权号:   KR087158

▎ 摘  要

NOVELTY - N-doping method of graphene involves forming graphene oxide by oxygen-plasma treatment of graphene, transferring graphene oxide to another graphene to form bilayered structure of graphene oxide/graphene, and doping resulting structure with an amine-containing functional group. USE - N-doping method of graphene for N-doped graphene oxide/graphene bilayer structure (claimed) for transparent electrode and sensor. ADVANTAGE - N-doped graphene oxide/graphene bilayer structure having excellent thermal stability and flexibility is produced by doping method. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for N-doped graphene oxide/graphene bilayer structure.