• 专利标题:   Forming electronic device involves forming graphene barrier layer on substrate surface and depositing fill layer over the graphene barrier layer, where graphene barrier layer prevents diffusion of halogen or boron.
  • 专利号:   US2021167021-A1, US11621226-B2
  • 发明人:   NEMANI S D, MALLICK A B, GANDIKOTA S, WU Y
  • 专利权人:   APPLIED MATERIALS INC
  • 国际专利分类:   C23C016/26, C23C016/455, H01L021/285, H01L021/3205, H01L021/768, H01L023/532, H01L027/115, H10B069/00
  • 专利详细信息:   US2021167021-A1 03 Jun 2021 H01L-023/532 202164 English
  • 申请详细信息:   US2021167021-A1 US171432 09 Feb 2021
  • 优先权号:   US717824P, US171432

▎ 摘  要

NOVELTY - Forming an electronic device involves forming a graphene barrier layer on a substrate surface and depositing a fill layer over the graphene barrier layer, where graphene barrier layer prevents diffusion of a halogen or boron between the fill layer and the substrate surface. USE - Method for forming electronic device. ADVANTAGE - The atoms can readily diffuse from one material to another potentially damaging or adversely altering the properties of the material into which they diffuse.