▎ 摘　　要

NOVELTY - Preparing hexagonal boron nitride and graphene composite film material involves dissolving carbon capability as growth substrate, boron and nitrogen as precursor containing gas under condition of vacuum and high temperature to obtain high quality hexagonal boron nitride thin film growth, cooling process and dissolving precipitation of carbon atoms between h-BN in metal substrate to form graphene film by step growth method to obtain h-BN/graphene metal substrate and transferring target substrate to obtain h-BN/graphene composite film material. USE - Method for preparing hexagonal boron nitride (h-BN) and graphene composite film material. ADVANTAGE - The method enables to prepare hexagonal boron nitride (h-BN) and graphene composite film material in simple manner which reduces defect and impurity, improves material quality.