• 专利标题:   Variable-resistance storage structure, has variable-resistance storage structure main body provided with top electrode that is connected with graphene structure body and fixedly connected to bottom electrode.
  • 专利号:   CN103824938-A
  • 发明人:   QIAN M, WANG X
  • 专利权人:   UNIV NANJING
  • 国际专利分类:   G11C013/00, H01L045/00
  • 专利详细信息:   CN103824938-A 28 May 2014 H01L-045/00 201449 Pages: 11 Chinese
  • 申请详细信息:   CN103824938-A CN10075803 03 Mar 2014
  • 优先权号:   CN10075803

▎ 摘  要

NOVELTY - The structure has a variable-resistance storage structure main body provided with a top electrode that is connected with a graphene structure body. The variable resistance storage structure main body is fixed with a substrate. A top electrode is fixedly connected with a bottom electrode that is arranged with an upper substrate. An upper part of the top electrode is formed with a variable-resistance layer that is made of titanium dioxide (Ti02) material, tantalum pentoxide (Ta205) material, aluminum oxide (Al203) material and hafnium oxide (HfO2) material. USE - Variable-resistance storage structure. ADVANTAGE - The structure is simple, transparent and flexible, and has graphite alkene resistance and better variable-resistance storage effect, and saves energy and improves switch maintainability. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a variable-resistance storage structure preparation method. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating operations of a variable-resistance storage structure.'(Drawing includes non-English language text)'