• 专利标题:   Modified fluorinated graphene quantum dot used in integrated circuit, semiconductor device or display device, comprises curing accelerator modified fluorinated graphite quantum dot, where curing accelerator includes substituted nitrogen-containing heterocyclic compound and substituted amine compound.
  • 专利号:   CN115403831-A
  • 发明人:   SUN R, ZHANG G, WANG T, LI J
  • 专利权人:   SHENZHEN ADVANCED ELECTRONIC MATERIAL, SHENZHEN INST ADVANCED TECHNOLOGY
  • 国际专利分类:   C08K003/04, C08K009/04, G03F007/004
  • 专利详细信息:   CN115403831-A 29 Nov 2022 C08K-009/04 202307 Chinese
  • 申请详细信息:   CN115403831-A CN11109487 13 Sep 2022
  • 优先权号:   CN11109487

▎ 摘  要

NOVELTY - Modified fluorinated graphene quantum dot comprises a curing accelerator modified fluorinated graphite quantum dot, where the curing accelerator includes a substituted nitrogen-containing heterocyclic compound and/or a substituted amine compound, and the substituted is a substituent group capable of reacting with a functional group on the fluorinated quantum dot. USE - Modified fluorinated graphene quantum dot used in an integrated circuit, a semiconductor device or a display device (claimed). ADVANTAGE - The photosensitive composite material containing the modified fluorinated graphene quantum dots has excellent performances of low-temperature curing and high sensitivity, and can obtain high-quality photoetching patterns with no defects, no color, high transparency, high resolution and low dielectric constant through photoetching-developing-low-temperature curing technology. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: A method for preparing the modified fluorinated graphene quantum dot, which involves: reacting the fluorinated graphene quantum dot with a curing accelerator in the presence of a catalyst to obtain the modified fluorinated graphene quantum dot. A photoactive composite, which comprises modified fluorinated graphene quantum dots, a polyimide precursor resin, and a photoactive agent.