• 专利标题:   Pulsed light detector based on the photoacoustic effect includes a substrate, a low acoustic impedance material, a high acoustic impedance material, a piezoelectric film, a lower electrode, a photoacoustic film and an upper electrode.
  • 专利号:   CN112362174-A
  • 发明人:   HAN C, ZHAO Q, WANG X
  • 专利权人:   UNIV QINGDAO SCI TECHNOLOGY
  • 国际专利分类:   G01J001/42, G01J011/00
  • 专利详细信息:   CN112362174-A 12 Feb 2021 G01J-011/00 202133 Pages: 6 Chinese
  • 申请详细信息:   CN112362174-A CN11295570 18 Nov 2020
  • 优先权号:   CN11295570

▎ 摘  要

NOVELTY - Pulsed light detector based on the photoacoustic effect includes a substrate (1), a low acoustic impedance material (2), a high acoustic impedance material (3), a piezoelectric film (4), a lower electrode, a photoacoustic film (5) and an upper electrode. USE - Pulsed light detector based on the photoacoustic effect. ADVANTAGE - The pulse light detector can quickly and accurately analyze and measure the broadband spectrum of the pulse light, and has small energy dissipation and high detection sensitivity. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a manufacturing method of a pulsed photodetector based on photoacoustic effect, which involves: (A) cleaning substrate with acetone, absolute ethanol, and deionized water for 3 minutes, and drying with nitrogen; (B) depositing low acoustic impedance materials on the substrate by radio frequency sputtering, electron beam evaporation, plasma-enhanced chemical vapor deposition or pulsed laser deposition; (C) depositing high acoustic impedance materials on low acoustic impedance materials by radio frequency sputtering, electron beam evaporation, plasma enhanced chemical vapor deposition or pulsed laser deposition; (D) depositing of piezoelectric films on high acoustic impedance materials by radio frequency sputtering, electron beam evaporation, plasma enhanced chemical vapor deposition or pulsed laser deposition; (E) depositing a photoacoustic film on the piezoelectric film by spin coating; (F) depositing the lower electrode on the high acoustic impedance material by unit of radio frequency sputtering and electron beam evaporation; and (G) depositing electrode on the piezoelectric film by unit of radio frequency sputtering and electron beam evaporation. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view of pulsed light detector based on the photoacoustic effect. Substrate (1) Low acoustic impedance material (2) High acoustic impedance material (3) Piezoelectric film (4) Photoacoustic film (5)