▎ 摘　　要

NOVELTY - Manufacture of sulfur-doped graphene film involves placing a metal substrate and thioanthracene in the center of a heating zone (Z1) and a heating zone (Z2) of a reaction chamber of a chemical vapor deposition system, respectively, introducing a mixed gas formed with inert gas and hydrogen gas, annealing metal substrate, heating thioanthracene through the heating zone (Z2), performing high-temperature catalytic cracking reaction of thienanthracene in the metal substrate, and reducing temperature of metal substrate and thienanthracene to room temperature. USE - Manufacture of sulfur-doped graphene film used for sensor. ADVANTAGE - The method enables economical manufacture of sulfur-doped graphene film by simple and environmentally-friendly process. DETAILED DESCRIPTION - Manufacture of sulfur-doped graphene film involves placing a metal substrate and thioanthracene in the center of a heating zone (Z1) and a heating zone (Z2) of a reaction chamber of a chemical vapor deposition system, respectively, introducing a mixed gas formed with inert gas and hydrogen gas into the reaction chamber of the chemical vapor deposition system under vacuum condition, subjecting the metal substrate to a high-temperature annealing treatment by controlling the temperature of the heating zone (Z1), maintaining the temperature at which graphene is prepared, heating the thioanthracene through the heating zone (Z2), gasifying to deliver thioanthracene gas to the metal substrate through the mixed gas, performing high-temperature catalytic cracking reaction of thienanthracene in the metal substrate, maintaining the negative pressure during the reaction to improve the quality of the film growth, reducing temperature of metal substrate and thienanthracene to room temperature, terminating mixed gas, and obtaining sulfur-doped graphene film on the surface of the metal substrate. The heating zone (Z2) is provided at the front end of the heating zone (Z1), and insulated from the heating zone (Z1).