• 专利标题:   Graphene/cadmium sulfide quantum dot composite material preparing method for photoelectric conversion, involves obtaining dispersed tawny single layer oxidized graphene sheet solution, and washing obtained product with acetone and alcohol.
  • 专利号:   CN101559918-A, CN101559918-B
  • 发明人:   CAO A, CHANG Y, FAN C, LIU Y, LIU Z, WU M
  • 专利权人:   UNIV SHANGHAI
  • 国际专利分类:   B82B003/00
  • 专利详细信息:   CN101559918-A 21 Oct 2009 B82B-003/00 200977 Pages: 7 Chinese
  • 申请详细信息:   CN101559918-A CN10050333 30 Apr 2009
  • 优先权号:   CN10050333

▎ 摘  要

NOVELTY - The method involves adding a certain amount of concentrated sulfuric acid, potassium persulfate and phosphorus pentoxide, and obtaining uniformly dispersed tawny single layer oxidized graphene sheet solution. A preparation of graphene/cadmium sulfide quantum dot composite material is uniformly dispersed with cadmium acetate dehydrates in a certain volume of dimethyl sulfoxide solution based on a ratio of 1:1. One milliliter of dimethyl sulfoxide solution is added to one milligram of graphene, and the obtained product is repeatedly washed with acetone and alcohol. USE - Method for preparing graphene/cadmium sulfide quantum dot composite material of a photoelectric conversion. ADVANTAGE - The method ensures high energy conversion rate. DESCRIPTION OF DRAWING(S) - The drawing shows a graphical representation illustrating a graphene/cadmium sulfide quantum dot composite material preparing method.'(Drawing includes non-English language text)'