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  • 专利标题:   Graphene plasmon device used for enhancing infrared spectrum detection, comprises gate electrode, dielectric layer made of e.g. sodium chloride, graphene layer, source electrode, drain electrode metal layer and to-be-detected material.
  • 专利号:   CN105355702-A, CN105355702-B
  • 发明人:   BAI B, DAI Q, HU D, HU H, YANG X, LIU R
  • 专利权人:   NAT CENT NANOSCIENCE TECHNOLOGY CHINA, NAT CENT NANOSCIENCE TECHNOLOGY CHINA
  • 国际专利分类:   H01L031/0236, H01L031/028, H01L031/101, H01L031/18
  • 专利详细信息:   CN105355702-A 24 Feb 2016 H01L-031/101 201646 Pages: 9 English
  • 申请详细信息:   CN105355702-A CN10792417 17 Nov 2015
  • 优先权号:   CN10792417

▎ 摘　　要

NOVELTY - A graphene plasmon device comprises a gate electrode as a substrate, a dielectric layer, a graphene layer, a source electrode, a drain electrode metal layer and a to-be-detected material, which are sequentially provided from bottom to top. The material of the dielectric layer is chosen from sodium chloride, potassium bromide, cesium iodide, cesium bromide, magnesium fluoride, calcium fluoride, barium fluoride, lithium fluoride, silver bromide, silver chloride, zinc sulfide, zinc selenide, thallium bromoiodide (KRS-5), AMTIR1-6 amorphous material, diamond and silica. USE - Graphene plasmon device is used for enhancing infrared spectrum detection. DETAILED DESCRIPTION - A graphene plasmon device comprises a substrate, a dielectric layer, a graphene layer, a source electrode, a drain electrode metal layer and a to-be-detected material, which are sequentially provided from bottom to top. The substrate is a gate electrode. The dielectric layer is deposited on the substrate. The graphene layer covers the dielectric layer. The source electrode and the drain electrode metal layer are deposited on the graphene layer. The source electrode and the drain electrode metal layer are conducted by graphene. The dielectric layer is clamped between the substrate and the graphene layer. The partial region of the graphene layer between the source electrode and the drain electrode metal layer has a periodic micro-nano structure which includes multiple continuous structures with step-shaped longitudinal sections. The edge of step-shaped structure produces infrared light excitation localized plasmons. A to-be-detected material layer is provided to cover the step-shaped structures. The material of the dielectric layer is chosen from sodium chloride, potassium bromide, cesium iodide, cesium bromide, magnesium fluoride, calcium fluoride, barium fluoride, lithium fluoride, silver bromide, silver chloride, zinc sulfide, zinc selenide, thallium bromoiodide (KRS-5), AMTIR1-6 amorphous material, diamond and silica. An INDEPENDENT CLAIM is included for preparation of graphene plasmon device.