• 专利标题:   Manufacture of nitrogen-doped graphene electrode used for capacitor and electrical double layer condenser, involves peeling graphene from carbonaceous material and doping with nitrogen by plasma process.
  • 专利号:   KR2013034182-A, KR1274991-B1
  • 发明人:   KIM Y J, LEE S Y, JUNG K Y, YEONG L S
  • 专利权人:   RES INST IND SCI TECHNOLOGY, RES INST IND SCI TECHNOLOGY
  • 国际专利分类:   C01B031/02, H01G009/042, H01G009/058, H01G011/22
  • 专利详细信息:   KR2013034182-A 05 Apr 2013 H01G-009/058 201373 Pages: 13
  • 申请详细信息:   KR2013034182-A KR098072 28 Sep 2011
  • 优先权号:   KR098072

▎ 摘  要

NOVELTY - Graphene is peeled from a carbonaceous material and graphene is doped with nitrogen by plasma process, to obtain nitrogen-doped graphene electrode. USE - Manufacture of nitrogen-doped graphene electrode used for capacitor and electrical double layer condenser (all claimed). ADVANTAGE - The electrical double layer condenser using the manufactured nitrogen-doped electrode has excellent electrostatic capacity. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) capacitor; and (2) electrical double layer condenser.