▎ 摘　　要

NOVELTY - The device has a multi-layer structure equipped with graphene that is prepared on a substrate. The graphene is provided with an n-type dopant doped n-type graphene domain and a p-type dopant doped p-type graphene domain. An insulating layer is prepared on multiple quantum dots that are formed on the n-type graphene domain. An N-type electrode is prepared on the substrate and connected to the n-type graphene domain. A P-contact is prepared on the substrate and connected to the p-type graphene domain. An n-type dopant is selected nitrigen, fuorin, manganese or ammonium trinnitrate. USE - Graphene light emitting device. ADVANTAGE - The device has high efficiency. The device effectively controls wavelength of light and improves intensity of the light. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene light emitting device manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a side view of a graphene light emitting device.