1. 平台首页
  2. 国际专利信息
  • 专利标题:   Growing graphene selectively involves forming ion implantation region and ion non-implantation region in substrate by implanting ions locally into substrate and selectively growing graphene in ion implantation region.
  • 专利号:   US2021206643-A1, KR2021087823-A
  • 发明人:   LEE E, SHIN H, SHIN K, BYUN K, KIM C, LEE C, LEE C S, BYUN K E, SHIN K W, SHIN H J
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD
  • 国际专利分类:   C23C016/513, C23C016/26, C23C016/04, C23C016/02, C01B032/194, C01B032/186, C01B032/188
  • 专利详细信息:   US2021206643-A1 08 Jul 2021 C01B-032/186 202176 English
  • 申请详细信息:   US2021206643-A1 US138194 30 Dec 2020
  • 优先权号:   KR001012

▎ 摘　　要

NOVELTY - Growing graphene selectively involves forming an ion implantation region and an ion non-implantation region in a substrate by implanting ions locally into the substrate and selectively growing graphene in the ion implantation region or the ion non-implantation region. USE - Method for growing graphene selectively. ADVANTAGE - The graphene has high electric mobility, excellent thermal characteristics, chemical stability, wide surface area.