▎ 摘　　要

NOVELTY - The cell has an external electric field control layer (5) contacted with a graphene layer (3), where thickness of the graphene layer is measured as 0.4 nm to 10nm. A semiconductor p-n junction substrate (2) is orderly overlapped with a P-type semiconductor, an N-type semiconductor, a buffer layer and a substrate layer. The external electric field control layer generates electrostatic field by using external quantum dots, where the external electric field control layer is made of a polarization material. The semiconductor p-n junction substrate comprises a rear electrode (1) and a front electrode (4). USE - Graphene/semiconductor built-in electric field controlled p-n junction solar cell. ADVANTAGE - The cell is convenient to use, has better adjustable performance with high conversion efficiency and high popularization, and adopts simple technique. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a graphene/semiconductor built-in electric field controlled p-n junction solar cell manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a graphene/semiconductor built-in electric field controlled p-n junction solar cell. Rear electrode (1) Semiconductor p-n junction substrate (2) Graphene layer (3) Front electrode (4) External electric field control layer (5)