▎ 摘　　要

NOVELTY - The method involves growing a zinc oxide nanorod (200) on a graphene seed layer (100). The graphene seed layer is formed on a semiconductor layer (16,18). An active layer (17) is formed on the semiconductor layer. The graphene seed layer is doped with the gold. The semiconductor layer is equipped on the active layer and transmits the light emitted from the active layer. The surface of the graphene seed layer if processed by ultra violet processing, ozone treatment, oxygen plasma treatment, the argon processing, or the nitrogen plasma processing. USE - Method for manufacturing a light emitting device (Claimed). ADVANTAGE - The zinc oxide nanorod is grown on a graphene seed layer, and the graphene seed layer is formed on a semiconductor layer, thus enables to easily and uniformly grow zinc oxide nanorod of high density on the graphene seed layer, thus the optical extraction efficiency of the light emitting device is increased. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a light emitting device. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a light emitting diode. Protective layer (14) Semiconductor layer (16,18) Active layer (17) Graphene seed layer (100) Zinc oxide nanorod (200)