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  • 专利标题:   Ferromagnetic material for heterostructure and spintronic devices, comprises Dirac half metal material, where ferromagnetic material is ultrathin, comprises one monolayer, Dirac half metal material comprises massless Dirac electrons and material comprises manganese trihalide.
  • 专利号:   US2023055260-A1
  • 发明人:   SUN Q, KIOUSSIS N
  • 专利权人:   UNIV CALIFORNIA
  • 国际专利分类:   C01G045/06, H01F010/00, H01F010/193
  • 专利详细信息:   US2023055260-A1 23 Feb 2023 H01F-010/193 202324 English
  • 申请详细信息:   US2023055260-A1 US980694 04 Nov 2022
  • 优先权号:   US637478P, US980694

▎ 摘　　要

NOVELTY - Ferromagnetic material comprises at least one Dirac half metal material having a Fermi velocity up to 3.83x105m/s as compared to a Fermi velocity of graphene. USE - Ferromagnetic material for heterostructure(claimed) and spintronic devices. ADVANTAGE - The ferromagnetic material exhibits 100% spin polarization, and electrons exhibit ultrahigh mobility. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) a spintronic device, which comprises a Dirac half metal material; and (2) a heterostructure, which comprises the ferromagnetic material.