▎ 摘　　要

NOVELTY - An insulation film layer (3) is formed on a base material (2) and a catalyst metal layer (4) is provided on the insulation film layer. Carbon is supplied in plasma state under high-vacuum degree and temperature, on the catalyst metal layer and the graphene layer (5) is formed to obtain processed graphene structure (1). USE - Manufacture of graphene structure used for electronic devices, e.g. Field Effect Transistor. ADVANTAGE - The graphene structure has favorable thickness and high mobility, excellent ballistic conduction and current density tolerance, and is chemically stable. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of graphene structure. Graphene structure (1) Base material (2) Insulation film layer (3) Catalyst metal layer (4) Graphene layer (5)