• 专利标题:   Graphene nanometer strip waveguide coupled resonator based logic AND gate device, has second and third graphene nanometer strip waveguide arranged to straight line, and first graphene resonant cavity located on straight line.
  • 专利号:   CN110441975-A
  • 发明人:   WANG B, YU H, ZENG Q, XIONG L, DU J, LV H
  • 专利权人:   UNIV HUBEI ENG
  • 国际专利分类:   G02F003/00
  • 专利详细信息:   CN110441975-A 12 Nov 2019 G02F-003/00 201992 Pages: 13 Chinese
  • 申请详细信息:   CN110441975-A CN10640967 16 Jul 2019
  • 优先权号:   CN10640967

▎ 摘  要

NOVELTY - The device has a sapphire layer (7) formed on a silicon substrate (6). The sapphire layer is arranged on a first graphene resonant cavity (4) and a second graphene resonant cavity (5). A first graphene nanometer strip waveguide (1) is coupled to the first graphene resonant cavity. The first graphene resonant cavity is connected with the graphene resonant cavity. A third graphene nanometer strip waveguide (3) is directly coupled to the second graphene resonant cavity. The first graphene nanometer strip waveguide, a second graphene nanometer strip waveguide (2) and the third graphene nanometer strip waveguide are orderly arranged with a straight line. The first graphene resonant cavity and the second graphene resonant cavity are located on same side of the straight line. USE - Graphene nanometer strip waveguide coupled resonator based logic AND gate device. ADVANTAGE - The device realizes logic and AND gate function, and has characteristics of small size, high extinction ratio and ultra-fast. DESCRIPTION OF DRAWING(S) - The drawing shows a side perspective view of a graphene nanometer strip waveguide coupled resonator based logic and gate device. Graphene nanometer strip waveguides (1,2,3) Graphene resonant cavities (4,5) Silicon substrate (6) Sapphire layer (7)